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Information card for entry 1563556
Preview
| Coordinates | 1563556.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | Bi K S4 Si |
|---|---|
| Calculated formula | Bi K S4 Si |
| Title of publication | KBiMS4 (M=Si, Ge): Synthesis, structure, and electronic structure |
| Authors of publication | Mei, Dajiang; Lin, Zheshuai; Bai, Lei; Yao, Jiyong; Fu, Peizhen; Wu, Yicheng |
| Journal of publication | Journal of Solid State Chemistry |
| Year of publication | 2010 |
| Journal volume | 183 |
| Journal issue | 7 |
| Pages of publication | 1640 - 1644 |
| a | 6.4769 ± 0.0013 Å |
| b | 6.7371 ± 0.0013 Å |
| c | 17.168 ± 0.004 Å |
| α | 90° |
| β | 108.14 ± 0.03° |
| γ | 90° |
| Cell volume | 711.9 ± 0.3 Å3 |
| Cell temperature | 93 ± 2 K |
| Ambient diffraction temperature | 93 K |
| Number of distinct elements | 4 |
| Space group number | 14 |
| Hermann-Mauguin space group symbol | P 1 21/c 1 |
| Hall space group symbol | -P 2ybc |
| Residual factor for all reflections | 0.0185 |
| Residual factor for significantly intense reflections | 0.0147 |
| Weighted residual factors for significantly intense reflections | 0.0274 |
| Weighted residual factors for all reflections included in the refinement | 0.0281 |
| Goodness-of-fit parameter for all reflections included in the refinement | 0.991 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 266532 (current) | 2021-06-17 | cif/ Adding structures of 1563556, 1563557 via cif-deposit CGI script. |
1563556.cif |
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Users of the data should acknowledge the original authors of the
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