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Information card for entry 2240649
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| Coordinates | 2240649.cif |
|---|---|
| Structure factors | 2240649.hkl |
| Original paper (by DOI) | HTML |
| Chemical name | Strontium germanium trioxide |
|---|---|
| Formula | Ge O3 Sr |
| Calculated formula | Ge O3 Sr |
| Title of publication | Crystal structure of SrGeO~3~ in the high-pressure perovskite-type phase |
| Authors of publication | Nakatsuka, Akihiko; Arima, Hiroshi; Ohtaka, Osamu; Fujiwara, Keiko; Yoshiasa, Akira |
| Journal of publication | Acta Crystallographica Section E |
| Year of publication | 2015 |
| Journal volume | 71 |
| Journal issue | 5 |
| Pages of publication | 502 - 504 |
| a | 3.7978 ± 0.0002 Å |
| b | 3.7978 ± 0.0002 Å |
| c | 3.7978 ± 0.0002 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 54.777 ± 0.005 Å3 |
| Cell temperature | 296 K |
| Ambient diffraction temperature | 296 K |
| Number of distinct elements | 3 |
| Space group number | 221 |
| Hermann-Mauguin space group symbol | P m -3 m |
| Hall space group symbol | -P 4 2 3 |
| Residual factor for significantly intense reflections | 0.0192 |
| Weighted residual factors for all reflections included in the refinement | 0.02 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.95 |
| Diffraction radiation wavelength | 0.71069 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | Yes |
| Revision | Date | Message | Files |
|---|---|---|---|
| 181906 (current) | 2016-04-06 | hkl/2/24/ (antanas@echidna) Adding IUCr specific svn headers to multiple entries in subrange 2/24/06 |
2240649.cif 2240649.hkl |
| 136439 | 2015-05-13 | cif/ hkl/ Adding structures of 2240649 via cif-deposit CGI script. |
2240649.cif 2240649.hkl |
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Users of the data should acknowledge the original authors of the
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