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Information card for entry 4129737
Preview
| Coordinates | 4129737.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C30 H52 Ni O4 P2 Si2 |
|---|---|
| Calculated formula | C30 H52 Ni O4 P2 Si2 |
| Title of publication | Reactions of Phenylhydrosilanes with Pincer-Nickel Complexes: Evidence for New Si-O and Si-C Bond Formation Pathways. |
| Authors of publication | Hao, Jingjun; Vabre, Boris; Zargarian, Davit |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2015 |
| Journal volume | 137 |
| Journal issue | 48 |
| Pages of publication | 15287 - 15298 |
| a | 17.5124 ± 0.0006 Å |
| b | 12.2425 ± 0.0004 Å |
| c | 18.1131 ± 0.0006 Å |
| α | 90° |
| β | 114.634 ± 0.002° |
| γ | 90° |
| Cell volume | 3529.9 ± 0.2 Å3 |
| Cell temperature | 100 K |
| Ambient diffraction temperature | 100 K |
| Number of distinct elements | 6 |
| Space group number | 14 |
| Hermann-Mauguin space group symbol | P 1 21/c 1 |
| Hall space group symbol | -P 2ybc |
| Residual factor for all reflections | 0.0745 |
| Residual factor for significantly intense reflections | 0.0646 |
| Weighted residual factors for significantly intense reflections | 0.1668 |
| Weighted residual factors for all reflections included in the refinement | 0.1743 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.066 |
| Diffraction radiation wavelength | 1.54178 Å |
| Diffraction radiation type | CuKα |
| Has coordinates | Yes |
| Has disorder | Yes |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 240403 (current) | 2019-11-25 | cif/ Adding structures of 4129735, 4129736, 4129737 via cif-deposit CGI script. |
4129737.cif |
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Users of the data should acknowledge the original authors of the
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