Crystallography Open Database
- COD Home
- Accessing COD Data
- Add Your Data
- Documentation
Information card for entry 4131750
Preview
| Coordinates | 4131750.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C32 H32 Cl4 N4 O8 Pb2 |
|---|---|
| Calculated formula | C32 H32 Cl4 N4 O8 Pb2 |
| Title of publication | Design Strategy for Improving Optical and Electrical Properties and Stability of Lead-Halide Semiconductors. |
| Authors of publication | Sun, Cai; Xu, Gang; Jiang, Xiao-Ming; Wang, Guan-E; Guo, Pei-Yu; Wang, Ming-Sheng; Guo, Guo-Cong |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2018 |
| Journal volume | 140 |
| Journal issue | 8 |
| Pages of publication | 2805 - 2811 |
| a | 13.4033 ± 0.0014 Å |
| b | 7.6867 ± 0.0004 Å |
| c | 17.4828 ± 0.0014 Å |
| α | 90° |
| β | 92.257 ± 0.009° |
| γ | 90° |
| Cell volume | 1799.8 ± 0.3 Å3 |
| Cell temperature | 293 ± 2 K |
| Ambient diffraction temperature | 293.15 K |
| Number of distinct elements | 6 |
| Space group number | 14 |
| Hermann-Mauguin space group symbol | P 1 21/c 1 |
| Hall space group symbol | -P 2ybc |
| Residual factor for all reflections | 0.1103 |
| Residual factor for significantly intense reflections | 0.0768 |
| Weighted residual factors for significantly intense reflections | 0.178 |
| Weighted residual factors for all reflections included in the refinement | 0.2071 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.049 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 241918 (current) | 2019-11-25 | cif/ Adding structures of 4131750 via cif-deposit CGI script. |
4131750.cif |
All data in the COD and the database itself are dedicated to the
public domain and licensed under the
CC0
License
.
Users of the data should acknowledge the original authors of the
structural data.