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Information card for entry 1561739
Preview
| Coordinates | 1561739.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Common name | Ba8PdU2Se16 |
|---|---|
| Formula | Ba8 Pd Se16 U2 |
| Calculated formula | Ba8 Pd Se16 U2 |
| SMILES | [U]1([Se][Pd]2([Se][U]([Se]2)([Se])([Se])([Se])[Se])[Se]1)([Se])([Se])([Se])[Se].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Se-][Se-].[Ba+2].[Ba+2].[Se-][Se-].[Ba+2] |
| Title of publication | Synthesis, crystal structure, resistivity, and electronic structure of the U(V) quaternary polyselenide Ba8PdU2Se12(Se2)2 |
| Authors of publication | Prakash, Jai; Mesbah, Adel; Lebègue, Sébastien; Malliakas, Christos D.; Ibers, James A. |
| Journal of publication | Journal of Solid State Chemistry |
| Year of publication | 2015 |
| Journal volume | 230 |
| Pages of publication | 70 - 74 |
| a | 9.49 ± 0.0019 Å |
| b | 12.24 ± 0.002 Å |
| c | 13.78 ± 0.003 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 1600.7 ± 0.5 Å3 |
| Cell temperature | 100 ± 2 K |
| Ambient diffraction temperature | 100 ± 2 K |
| Number of distinct elements | 4 |
| Space group number | 58 |
| Hermann-Mauguin space group symbol | P n n m |
| Hall space group symbol | -P 2 2n |
| Residual factor for all reflections | 0.0311 |
| Residual factor for significantly intense reflections | 0.0293 |
| Weighted residual factors for significantly intense reflections | 0.0669 |
| Weighted residual factors for all reflections included in the refinement | 0.0677 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.33 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 264137 (current) | 2021-04-14 | cif/ Adding structures of 1561739 via cif-deposit CGI script. |
1561739.cif |
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