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Information card for entry 1570568
Preview
| Coordinates | 1570568.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | Dy2 O5 Si |
|---|---|
| Calculated formula | Dy2 O5 Si |
| Title of publication | Crystal Growth of the R2SiO5 Compounds (R = Dy, Ho, and Er) by the Floating Zone Method Using a Laser-Diode-Heated Furnace |
| Authors of publication | Ciomaga Hatnean, Vasile Cristian; Pui, Aurel; Simonov, Arkadiy; Ciomaga Hatnean, Monica |
| Journal of publication | Crystals |
| Year of publication | 2023 |
| Journal volume | 13 |
| Journal issue | 12 |
| Pages of publication | 1687 |
| a | 10.4642 ± 0.0002 Å |
| b | 6.74981 ± 0.00013 Å |
| c | 12.5396 ± 0.0003 Å |
| α | 90° |
| β | 102.739 ± 0.002° |
| γ | 90° |
| Cell volume | 863.89 ± 0.03 Å3 |
| Cell temperature | 293 ± 2 K |
| Ambient diffraction temperature | 293 K |
| Number of distinct elements | 3 |
| Space group number | 15 |
| Hermann-Mauguin space group symbol | I 1 2/a 1 |
| Hall space group symbol | -I 2ya |
| Residual factor for all reflections | 0.0329 |
| Residual factor for significantly intense reflections | 0.0269 |
| Weighted residual factors for significantly intense reflections | 0.0561 |
| Weighted residual factors for all reflections included in the refinement | 0.0603 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.168 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 288377 (current) | 2023-12-18 | cif/ Adding structures of 1570568 via cif-deposit CGI script. |
1570568.cif |
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