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Information card for entry 3000436
Preview
No preview available: structure is on hold until 2023-04-14
| Coordinates | Coordinates are not available: structure is on hold until 2023-04-14 |
|---|
| Formula | Ge Sn4 V3 Zr3 |
|---|---|
| Title of publication | Synthesis and crystal structure of Zr~3~V~3~GeSn~4~ |
| Authors of publication | Niang, K.; Parks, D.; Janssen, Y.; Jack Simonson |
| Journal of publication | To be published in Crystals |
| a | 9.229 ± 0.0002 Å |
| b | 9.229 ± 0.0002 Å |
| c | 5.5671 ± 0.0001 Å |
| α | 90° |
| β | 90° |
| γ | 120° |
| Cell volume | 410.647 ± 0.015 Å3 |
| Cell temperature | 294 K |
| Ambient diffraction temperature | 294 K |
| Number of distinct elements | 4 |
| Hermann-Mauguin space group symbol | P 63/m m c |
| Hall space group symbol | -P 6c 2c |
| Residual factor for all reflections | 0.0174 |
| Residual factor for significantly intense reflections | 0.0156 |
| Weighted residual factors for significantly intense reflections | 0.0277 |
| Weighted residual factors for all reflections included in the refinement | 0.028 |
| Goodness-of-fit parameter for significantly intense reflections | 2.14 |
| Goodness-of-fit parameter for all reflections included in the refinement | 2.12 |
| Diffraction radiation probe | x-ray |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | No |
| Has disorder | No |
| Has Fobs | No |
Version history
Not available for prepublication material.
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Users of the data should acknowledge the original authors of the
structural data.