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Information card for entry 4003636
Preview
| Coordinates | 4003636.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | Cs F6 Ga3 O6 Se2 |
|---|---|
| Calculated formula | Cs F6 Ga3 O6 Se2 |
| Title of publication | AGa3F6(SeO3)2 (A = Rb, Cs): A New Type of Phase-Matchable Hexagonal Tungsten Oxide Material with Strong Second-Harmonic Generation Responses |
| Authors of publication | Wu, Chao; Jiang, Xingxing; Lin, Lin; Lin, Zheshuai; Huang, Zhipeng; Humphrey, Mark G.; Zhang, Chi |
| Journal of publication | Chemistry of Materials |
| Year of publication | 2020 |
| a | 7.1876 ± 0.0005 Å |
| b | 7.1876 ± 0.0005 Å |
| c | 11.8681 ± 0.0009 Å |
| α | 90° |
| β | 90° |
| γ | 120° |
| Cell volume | 530.98 ± 0.07 Å3 |
| Cell temperature | 273 ± 2 K |
| Ambient diffraction temperature | 273 ± 2 K |
| Number of distinct elements | 5 |
| Space group number | 186 |
| Hermann-Mauguin space group symbol | P 63 m c |
| Hall space group symbol | P 6c -2c |
| Residual factor for all reflections | 0.0429 |
| Residual factor for significantly intense reflections | 0.0406 |
| Weighted residual factors for significantly intense reflections | 0.1317 |
| Weighted residual factors for all reflections included in the refinement | 0.1337 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.093 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 254354 (current) | 2020-07-17 | cif/ Adding structures of 4003636 via cif-deposit CGI script. |
4003636.cif |
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