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Information card for entry 4003667
Preview
| Coordinates | 4003667.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | Ge Li2 S4 Zn |
|---|---|
| Calculated formula | Ge Li2 S4 Zn |
| Title of publication | α-Li2ZnGeS4: A Wide-Bandgap Diamond-like Semiconductor with Excellent Balance between Laser-Induced Damage Threshold and Second Harmonic Generation Response |
| Authors of publication | Zhang, Jian-Han; Clark, Daniel J.; Brant, Jacilynn A.; Rosmus, Kimberly A.; Grima, Pedro; Lekse, Jonathan W.; Jang, Joon I.; Aitken, Jennifer A. |
| Journal of publication | Chemistry of Materials |
| Year of publication | 2020 |
| a | 13.0676 ± 0.0002 Å |
| b | 7.8387 ± 0.0001 Å |
| c | 6.2164 ± 0.0001 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 636.764 ± 0.016 Å3 |
| Cell temperature | 296 ± 2 K |
| Ambient diffraction temperature | 296 ± 2 K |
| Number of distinct elements | 4 |
| Space group number | 33 |
| Hermann-Mauguin space group symbol | P n a 21 |
| Hall space group symbol | P 2c -2n |
| Residual factor for all reflections | 0.0394 |
| Residual factor for significantly intense reflections | 0.0381 |
| Weighted residual factors for significantly intense reflections | 0.096 |
| Weighted residual factors for all reflections included in the refinement | 0.0977 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.065 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 255836 (current) | 2020-09-04 | cif/ Adding structures of 4003667 via cif-deposit CGI script. |
4003667.cif |
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