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Information card for entry 4109707
Preview
Coordinates | 4109707.cif |
---|---|
Original paper (by DOI) | HTML |
Formula | C46 H52 N2 |
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Calculated formula | C46 H52 N2 |
Title of publication | Synthesis, Characterization, and Application of Indolo[3,2-b]carbazole Semiconductors |
Authors of publication | Pierre-Luc T. Boudreault; Salem Wakim; Nicolas Blouin; Michel Simard; Christian Tessier; Ye Tao; Mario Leclerc |
Journal of publication | Journal of the American Chemical Society |
Year of publication | 2007 |
Journal volume | 129 |
Pages of publication | 9125 - 9136 |
a | 5.553 ± 0.003 Å |
b | 17.278 ± 0.01 Å |
c | 19.305 ± 0.012 Å |
α | 81.686 ± 0.007° |
β | 82.767 ± 0.007° |
γ | 80.819 ± 0.007° |
Cell volume | 1799.2 ± 1.8 Å3 |
Cell temperature | 200 ± 2 K |
Ambient diffraction temperature | 200 ± 2 K |
Number of distinct elements | 3 |
Space group number | 2 |
Hermann-Mauguin space group symbol | P -1 |
Hall space group symbol | -P 1 |
Residual factor for all reflections | 0.2202 |
Residual factor for significantly intense reflections | 0.087 |
Weighted residual factors for significantly intense reflections | 0.1876 |
Weighted residual factors for all reflections included in the refinement | 0.2235 |
Goodness-of-fit parameter for all reflections included in the refinement | 0.872 |
Diffraction radiation wavelength | 0.71073 Å |
Diffraction radiation type | MoKα |
Has coordinates | Yes |
Has disorder | No |
Has Fobs | No |
Revision | Date | Message | Files |
---|---|---|---|
178843 (current) | 2016-03-21 | cif/4/10/ (antanas@kurmis) Replacing _[local]_cod_* tags with their equivalents from the COD CIF dictionary in multiple entries in subrange 4/10/97. |
4109707.cif |
120076 | 2014-07-11 | Adding DOIs to range 4/10 structures. | 4109707.cif |
58484 | 2012-05-28 | cif/ Adding structures of 4109707 via cif-deposit CGI script. |
4109707.cif |
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Users of the data should acknowledge the original authors of the
structural data.