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Information card for entry 4127419
Preview
| Coordinates | 4127419.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | As32 Ga22 Sr15 |
|---|---|
| Calculated formula | As32 Ga22 Sr14.9987 |
| Title of publication | Supertetrahedral Layers Based on GaAs or InAs. |
| Authors of publication | Weippert, Valentin; Haffner, Arthur; Stamatopoulos, Alexis; Johrendt, Dirk |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2019 |
| Journal volume | 141 |
| Journal issue | 28 |
| Pages of publication | 11245 - 11252 |
| a | 22.966 ± 0.0004 Å |
| b | 22.9639 ± 0.0003 Å |
| c | 19.8929 ± 0.0003 Å |
| α | 90° |
| β | 98.229 ± 0.001° |
| γ | 90° |
| Cell volume | 10383.3 ± 0.3 Å3 |
| Cell temperature | 293 ± 2 K |
| Ambient diffraction temperature | 293 ± 2 K |
| Number of distinct elements | 3 |
| Space group number | 15 |
| Hermann-Mauguin space group symbol | C 1 2/c 1 |
| Hall space group symbol | -C 2yc |
| Residual factor for all reflections | 0.0793 |
| Residual factor for significantly intense reflections | 0.0365 |
| Weighted residual factors for significantly intense reflections | 0.0642 |
| Weighted residual factors for all reflections included in the refinement | 0.0765 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.011 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 220692 (current) | 2019-11-02 | cif/ Adding structures of 4127419 via cif-deposit CGI script. |
4127419.cif |
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