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Information card for entry 4129217
Preview
| Coordinates | 4129217.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C16 H18 F12 N2 O4 Zn |
|---|---|
| Calculated formula | C16 H18 F12 N2 O4 Zn |
| Title of publication | MOCVD-derived highly transparent, conductive zinc- and tin-doped indium oxide thin films: precursor synthesis, metastable phase film growth and characterization, and application as anodes in polymer light-emitting diodes. |
| Authors of publication | Ni, Jun; Yan, He; Wang, Anchuang; Yang, Yu; Stern, Charlotte L.; Metz, Andrew W.; Jin, Shu; Wang, Lian; Marks, Tobin J.; Ireland, John R.; Kannewurf, Carl R. |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2005 |
| Journal volume | 127 |
| Journal issue | 15 |
| Pages of publication | 5613 - 5624 |
| a | 18.216 ± 0.006 Å |
| b | 10.448 ± 0.002 Å |
| c | 13.242 ± 0.004 Å |
| α | 90° |
| β | 105.617 ± 0.015° |
| γ | 90° |
| Cell volume | 2427.2 ± 1.2 Å3 |
| Cell temperature | 280 ± 2 K |
| Ambient diffraction temperature | 293 ± 2 K |
| Number of distinct elements | 6 |
| Space group number | 15 |
| Hermann-Mauguin space group symbol | C 1 2/c 1 |
| Hall space group symbol | -C 2yc |
| Residual factor for all reflections | 0.0963 |
| Residual factor for significantly intense reflections | 0.0447 |
| Weighted residual factors for significantly intense reflections | 0.1222 |
| Weighted residual factors for all reflections included in the refinement | 0.1454 |
| Goodness-of-fit parameter for all reflections included in the refinement | 0.953 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | Yes |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 239999 (current) | 2019-11-25 | cif/ Adding structures of 4129217 via cif-deposit CGI script. |
4129217.cif |
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