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Information card for entry 4131751
Preview
| Coordinates | 4131751.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C16 H18 Cl6 N2 O5 Pb3 |
|---|---|
| Calculated formula | C16 H18 Cl6 N2 O5 Pb3 |
| Title of publication | Design Strategy for Improving Optical and Electrical Properties and Stability of Lead-Halide Semiconductors. |
| Authors of publication | Sun, Cai; Xu, Gang; Jiang, Xiao-Ming; Wang, Guan-E; Guo, Pei-Yu; Wang, Ming-Sheng; Guo, Guo-Cong |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2018 |
| Journal volume | 140 |
| Journal issue | 8 |
| Pages of publication | 2805 - 2811 |
| a | 4.3181 ± 0.001 Å |
| b | 22.051 ± 0.006 Å |
| c | 25.387 ± 0.006 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 2417.3 ± 1 Å3 |
| Cell temperature | 293 ± 2 K |
| Ambient diffraction temperature | 293 ± 2 K |
| Number of distinct elements | 6 |
| Space group number | 19 |
| Hermann-Mauguin space group symbol | P 21 21 21 |
| Hall space group symbol | P 2ac 2ab |
| Residual factor for all reflections | 0.0451 |
| Residual factor for significantly intense reflections | 0.0374 |
| Weighted residual factors for significantly intense reflections | 0.0962 |
| Weighted residual factors for all reflections included in the refinement | 0.1004 |
| Goodness-of-fit parameter for all reflections included in the refinement | 0.925 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 241919 (current) | 2019-11-25 | cif/ Adding structures of 4131751 via cif-deposit CGI script. |
4131751.cif |
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