Crystallography Open Database

Information card for entry 4131768

Preview

Coordinates	4131768.cif
Original paper (by DOI)	HTML

Structure parameters

Formula	C24 H60 Bi2 N4 O2 S3 Si4
Calculated formula	C24 H60 Bi2 N4 O2 S3 Si4
SMILES	O1[Si](C)(C)N([Bi](N(C(C)(C)C)[Si]1(C)C)SSS[Bi]1N(C(C)(C)C)[Si](O[Si](C)(C)N1C(C)(C)C)(C)C)C(C)(C)C
Title of publication	Bismuth(III) Complex of the [S<sub>4</sub>]<sup>•-</sup> Radical Anion: Dimer Formation via Pancake Bonds.
Authors of publication	Schwamm, Ryan J.; Lein, Matthias; Coles, Martyn P.; Fitchett, Christopher M.
Journal of publication	Journal of the American Chemical Society
Year of publication	2017
Journal volume	139
Journal issue	46
Pages of publication	16490 - 16493
a	13.4362 ± 0.0005 Å
b	10.8026 ± 0.0004 Å
c	28.5609 ± 0.0008 Å
α	90°
β	92.026 ± 0.003°
γ	90°
Cell volume	4142.9 ± 0.2 Å³
Cell temperature	120 ± 0.1 K
Ambient diffraction temperature	120 ± 0.1 K
Number of distinct elements	7
Space group number	15
Hermann-Mauguin space group symbol	I 1 2/a 1
Hall space group symbol	-I 2ya
Residual factor for all reflections	0.0639
Residual factor for significantly intense reflections	0.0498
Weighted residual factors for significantly intense reflections	0.1204
Weighted residual factors for all reflections included in the refinement	0.128
Goodness-of-fit parameter for all reflections included in the refinement	1.081
Diffraction radiation probe	x-ray
Diffraction radiation wavelength	0.71073 Å
Diffraction radiation type	MoKα
Has coordinates	Yes
Has disorder	No
Has F_obs	No

Version history

Revision	Date	Message	Files
241933 (current)	2019-11-25	cif/ Adding structures of 4131765, 4131766, 4131767, 4131768, 4131769, 4131770, 4131771, 4131772, 4131773, 4131774, 4131775, 4131776, 4131777 via cif-deposit CGI script.	4131768.cif