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Information card for entry 4347553
Preview
| Coordinates | 4347553.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C36 H30 I4 O2 P2 Sn |
|---|---|
| Calculated formula | C36 H30 I4 O2 P2 Sn |
| SMILES | [Sn](I)(I)(I)(I)([O]=P(c1ccccc1)(c1ccccc1)c1ccccc1)[O]=P(c1ccccc1)(c1ccccc1)c1ccccc1 |
| Title of publication | Influence of π-Iodide Intermolecular Interactions on Electronic Properties of Tin(IV) Iodide Semiconducting Complexes. |
| Authors of publication | Wlaźlak, Ewelina; Macyk, Wojciech; Nitek, Wojciech; Szaciłowski, Konrad |
| Journal of publication | Inorganic chemistry |
| Year of publication | 2016 |
| Journal volume | 55 |
| Journal issue | 12 |
| Pages of publication | 5935 - 5945 |
| a | 10.293 ± 0.005 Å |
| b | 16.785 ± 0.005 Å |
| c | 11.494 ± 0.005 Å |
| α | 90° |
| β | 109.527 ± 0.005° |
| γ | 90° |
| Cell volume | 1871.6 ± 1.3 Å3 |
| Cell temperature | 120 ± 2 K |
| Ambient diffraction temperature | 120 ± 2 K |
| Number of distinct elements | 6 |
| Space group number | 4 |
| Hermann-Mauguin space group symbol | P 1 21 1 |
| Hall space group symbol | P 2yb |
| Residual factor for all reflections | 0.0294 |
| Residual factor for significantly intense reflections | 0.0249 |
| Weighted residual factors for significantly intense reflections | 0.0398 |
| Weighted residual factors for all reflections included in the refinement | 0.0418 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.016 |
| Diffraction radiation wavelength | 0.71069 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 232377 (current) | 2019-11-23 | cif/ Adding structures of 4347553 via cif-deposit CGI script. |
4347553.cif |
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Users of the data should acknowledge the original authors of the
structural data.