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Information card for entry 4347555
Preview
| Coordinates | 4347555.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Common name | Compound X |
|---|---|
| Formula | C24 H20 I4 O2 S2 Sn |
| Calculated formula | C24 H20 I4 O2 S2 Sn |
| SMILES | [Sn](I)(I)(I)(I)([O]=S(c1ccccc1)c1ccccc1)[O]=S(c1ccccc1)c1ccccc1 |
| Title of publication | Influence of π-Iodide Intermolecular Interactions on Electronic Properties of Tin(IV) Iodide Semiconducting Complexes. |
| Authors of publication | Wlaźlak, Ewelina; Macyk, Wojciech; Nitek, Wojciech; Szaciłowski, Konrad |
| Journal of publication | Inorganic chemistry |
| Year of publication | 2016 |
| Journal volume | 55 |
| Journal issue | 12 |
| Pages of publication | 5935 - 5945 |
| a | 21.11 ± 0.0001 Å |
| b | 9.056 ± 0.0002 Å |
| c | 15.313 ± 0.0002 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 2927.42 ± 0.08 Å3 |
| Cell temperature | 100 ± 2 K |
| Ambient diffraction temperature | 100 ± 2 K |
| Number of distinct elements | 6 |
| Space group number | 33 |
| Hermann-Mauguin space group symbol | P n a 21 |
| Hall space group symbol | P 2c -2n |
| Residual factor for all reflections | 0.0372 |
| Residual factor for significantly intense reflections | 0.0366 |
| Weighted residual factors for significantly intense reflections | 0.0963 |
| Weighted residual factors for all reflections included in the refinement | 0.0971 |
| Goodness-of-fit parameter for significantly intense reflections | 97.481 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.065 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 232379 (current) | 2019-11-23 | cif/ Adding structures of 4347555 via cif-deposit CGI script. |
4347555.cif |
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Users of the data should acknowledge the original authors of the
structural data.