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Information card for entry 7228833
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| Coordinates | 7228833.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Chemical name | (S,S)-Bis(2-hydroxypropylthio)(ethylenedithio) tetrathiafulvalene) chloride.H20 |
|---|---|
| Formula | C14 H20 Cl O3 S8 |
| Calculated formula | C14 H20 Cl O3 S8 |
| SMILES | [Cl-].S1CCSC2=C1SC(S2)=C1SC(=C(S1)SC[C@@H](O)C)SC[C@@H](O)C.O |
| Title of publication | New semiconducting radical-cation salts of chiral bis(2-hydroxylpropylthio)ethylenedithio TTF |
| Authors of publication | Lopez, Jordan R.; Martin, Lee; Wallis, John D.; Akutsu, Hiroki; Yamada, Jun-ichi; Nakatsuji, Shin-ichi; Wilson, Claire; Christensen, Jeppe; Coles, Simon J. |
| Journal of publication | CrystEngComm |
| Year of publication | 2017 |
| a | 7.4332 ± 0.0012 Å |
| b | 12.5638 ± 0.0019 Å |
| c | 12.657 ± 0.002 Å |
| α | 67.799 ± 0.01° |
| β | 78.034 ± 0.013° |
| γ | 78.704 ± 0.013° |
| Cell volume | 1061.6 ± 0.3 Å3 |
| Cell temperature | 296 ± 2 K |
| Ambient diffraction temperature | 296 K |
| Number of distinct elements | 5 |
| Space group number | 1 |
| Hermann-Mauguin space group symbol | P 1 |
| Hall space group symbol | P 1 |
| Residual factor for all reflections | 0.0647 |
| Residual factor for significantly intense reflections | 0.0497 |
| Weighted residual factors for significantly intense reflections | 0.1291 |
| Weighted residual factors for all reflections included in the refinement | 0.1401 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.07 |
| Diffraction radiation wavelength | 0.71075 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 199479 (current) | 2017-08-03 | cif/ Adding structures of 7228833, 7228834, 7228835, 7228836, 7228837, 7228838 via cif-deposit CGI script. |
7228833.cif |
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Users of the data should acknowledge the original authors of the
structural data.