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Information card for entry 7231950
Preview
| Coordinates | 7231950.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Common name | Type I silicon-gallium clathrate |
|---|---|
| Chemical name | sodium gallium silicon |
| Formula | Ga4.94 Na8 Si41.06 |
| Calculated formula | Ga4.9416 Na8 Si41.0584 |
| Title of publication | Na‒Ga‒Si type-I clathrate single crystals grown via Na evaporation using Na‒Ga and Na‒Ga‒Sn fluxes |
| Authors of publication | Urushiyama, Hironao; Morito, Haruhiko; Yamane, Hisanori; Terauchi, Masami |
| Journal of publication | RSC Advances |
| Year of publication | 2018 |
| Journal volume | 8 |
| Journal issue | 71 |
| Pages of publication | 40505 |
| a | 10.302 ± 0.0002 Å |
| b | 10.302 ± 0.0002 Å |
| c | 10.302 ± 0.0002 Å |
| α | 90° |
| β | 90° |
| γ | 90° |
| Cell volume | 1093.36 ± 0.04 Å3 |
| Cell temperature | 300 ± 2 K |
| Ambient diffraction temperature | 300 ± 2 K |
| Number of distinct elements | 3 |
| Space group number | 223 |
| Hermann-Mauguin space group symbol | P m -3 n |
| Hall space group symbol | -P 4n 2 3 |
| Residual factor for all reflections | 0.0102 |
| Residual factor for significantly intense reflections | 0.01 |
| Weighted residual factors for significantly intense reflections | 0.0269 |
| Weighted residual factors for all reflections included in the refinement | 0.0269 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.296 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 212372 (current) | 2018-12-05 | cif/ Adding structures of 7231947, 7231948, 7231949, 7231950, 7231951 via cif-deposit CGI script. |
7231950.cif |
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