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Information card for entry 7232887
Preview
| Coordinates | 7232887.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C24 H15 O4 S12 |
|---|---|
| Calculated formula | C24 H15 O4 S12 |
| Title of publication | Pressure-induced hydrogen localization coupled to a semiconductor‒insulator transition in a hydrogen-bonded molecular conductor |
| Authors of publication | Ueda, Akira; Kishimoto, Kouki; Isono, Takayuki; Yamada, Shota; Kamo, Hiromichi; Kobayashi, Kensuke; Kumai, Reiji; Murakami, Youichi; Gouchi, Jun; Uwatoko, Yoshiya; Nishio, Yutaka; Mori, Hatsumi |
| Journal of publication | RSC Advances |
| Year of publication | 2019 |
| Journal volume | 9 |
| Journal issue | 32 |
| Pages of publication | 18353 |
| a | 29.44 ± 0.04 Å |
| b | 8.383 ± 0.012 Å |
| c | 11.176 ± 0.017 Å |
| α | 90° |
| β | 101.55 ± 0.02° |
| γ | 90° |
| Cell volume | 2702 ± 7 Å3 |
| Cell temperature | 150 K |
| Ambient diffraction temperature | 150 K |
| Number of distinct elements | 4 |
| Space group number | 15 |
| Hermann-Mauguin space group symbol | C 1 2/c 1 |
| Hall space group symbol | -C 2yc |
| Residual factor for all reflections | 0.101 |
| Residual factor for significantly intense reflections | 0.0547 |
| Weighted residual factors for significantly intense reflections | 0.114 |
| Weighted residual factors for all reflections included in the refinement | 0.1397 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.041 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | Yes |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 215864 (current) | 2019-06-12 | cif/ Adding structures of 7232887, 7232888, 7232889, 7232890, 7232891 via cif-deposit CGI script. |
7232887.cif |
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Users of the data should acknowledge the original authors of the
structural data.