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Information card for entry 7233895
Preview
| Coordinates | 7233895.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C28 H9 F5 S6 |
|---|---|
| Calculated formula | C28 H9 F5 S6 |
| Title of publication | Asymmetric fused thiophenes for field-effect transistors: crystal structure-film microstructure-transistor performance correlations |
| Authors of publication | Ming-Chou Chen; Sureshraju Vegiraju; Chi-Ming Huang; Peng-Yi Huang; Kumaresan Prabakaran; Shueh Lin Yau; Wei-Chih Chen; Wei-Tao Peng; Ito Chao; Choongik Kim; Yu-Tai Tao |
| Journal of publication | Journal of Materials Chemistry C |
| Year of publication | 2014 |
| Journal volume | 2 |
| Pages of publication | 8892 - 8902 |
| a | 3.8338 ± 0.0005 Å |
| b | 5.8334 ± 0.0008 Å |
| c | 26.039 ± 0.004 Å |
| α | 86.15 ± 0.009° |
| β | 87.916 ± 0.01° |
| γ | 87.044 ± 0.009° |
| Cell volume | 579.93 ± 0.14 Å3 |
| Cell temperature | 296 ± 2 K |
| Ambient diffraction temperature | 296 ± 2 K |
| Number of distinct elements | 4 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.1096 |
| Residual factor for significantly intense reflections | 0.0692 |
| Weighted residual factors for significantly intense reflections | 0.1767 |
| Weighted residual factors for all reflections included in the refinement | 0.2001 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.064 |
| Diffraction radiation wavelength | 0.71073 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | Yes |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 218352 (current) | 2019-09-17 | cif/ Adding structures of 7233895 via cif-deposit CGI script. |
7233895.cif |
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Users of the data should acknowledge the original authors of the
structural data.