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Information card for entry 7234106
Preview
| Coordinates | 7234106.cif |
|---|---|
| Original paper (by DOI) | HTML |
| External links | PubChem |
| Chemical name | C12BTBT-F4TCNQ |
|---|---|
| Formula | C50 H56 F4 N4 S2 |
| Calculated formula | C50 H56 F4 N4 S2 |
| Title of publication | N-type field-effect transistors based on layered crystalline donor-acceptor semiconductors with dialkylated benzothienobenzothiophenes as electron donors |
| Authors of publication | Jun'ya Tsutsumi; Satoshi Matsuoka; Satoru Inoue; Hiromi Minemawari; Toshikazu Yamada; Tatsuo Hasegawa |
| Journal of publication | Journal of Materials Chemistry C |
| Year of publication | 2015 |
| Journal volume | 3 |
| Pages of publication | 1976 - 1981 |
| a | 7.096 ± 0.002 Å |
| b | 8.053 ± 0.002 Å |
| c | 21.148 ± 0.007 Å |
| α | 83.2 ± 0.03° |
| β | 86.85 ± 0.03° |
| γ | 72.5 ± 0.03° |
| Cell volume | 1144.2 ± 0.6 Å3 |
| Cell temperature | 293 K |
| Ambient diffraction temperature | 293 K |
| Number of distinct elements | 5 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for significantly intense reflections | 0.0917 |
| Weighted residual factors for all reflections included in the refinement | 0.1695 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.479 |
| Diffraction radiation wavelength | 0.71075 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 301866 (current) | 2025-08-23 | Add cross-references to PubChem compounds in COD range 7/23/ Each referenced PubChem compound corresponds to the full crystal structure. |
7234106.cif |
| 218773 | 2019-09-24 | cif/ Adding structures of 7234106 via cif-deposit CGI script. |
7234106.cif |
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Users of the data should acknowledge the original authors of the
structural data.