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Information card for entry 7234894
Preview
| Coordinates | 7234894.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C56 H120 As8 In8 |
|---|---|
| Calculated formula | C56 H120 As8 In8 |
| Title of publication | A single-source precursor approach to solution processed indium arsenide thin films |
| Authors of publication | Peter Marchand; Sanjayan Sathasivam; Benjamin A. D. Williamson; David Pugh; Salem M. Bawaked; Sulaiman N. Basahel; Abdullah Y. Obaid; David O. Scanlon; Ivan P. Parkin; Claire J. Carmalt |
| Journal of publication | Journal of Materials Chemistry C |
| Year of publication | 2016 |
| Journal volume | 4 |
| Pages of publication | 6761 - 6768 |
| a | 14.4602 ± 0.001 Å |
| b | 12.4339 ± 0.0009 Å |
| c | 23.7507 ± 0.0017 Å |
| α | 90° |
| β | 107.564 ± 0.001° |
| γ | 90° |
| Cell volume | 4071.2 ± 0.5 Å3 |
| Cell temperature | 100 ± 2 K |
| Ambient diffraction temperature | 100 ± 2 K |
| Number of distinct elements | 4 |
| Space group number | 14 |
| Hermann-Mauguin space group symbol | P 1 21/c 1 |
| Hall space group symbol | -P 2ybc |
| Residual factor for all reflections | 0.0482 |
| Residual factor for significantly intense reflections | 0.0324 |
| Weighted residual factors for significantly intense reflections | 0.0678 |
| Weighted residual factors for all reflections included in the refinement | 0.0749 |
| Goodness-of-fit parameter for all reflections included in the refinement | 1.05 |
| Diffraction radiation wavelength | 0.71075 Å |
| Diffraction radiation type | MoKα |
| Has coordinates | Yes |
| Has disorder | Yes |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 222409 (current) | 2019-11-04 | cif/ Adding structures of 7234894 via cif-deposit CGI script. |
7234894.cif |
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Users of the data should acknowledge the original authors of the
structural data.