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Information card for entry 4129735
Preview
| Coordinates | 4129735.cif |
|---|---|
| Original paper (by DOI) | HTML |
| Formula | C24 H38 Ni O2 P2 Si |
|---|---|
| Calculated formula | C24 H38 Ni O2 P2 Si |
| SMILES | [Ni]12([P](Oc3c2c(ccc3)O[P]1(C(C)C)C(C)C)(C(C)C)C(C)C)[SiH2]c1ccccc1 |
| Title of publication | Reactions of Phenylhydrosilanes with Pincer-Nickel Complexes: Evidence for New Si-O and Si-C Bond Formation Pathways. |
| Authors of publication | Hao, Jingjun; Vabre, Boris; Zargarian, Davit |
| Journal of publication | Journal of the American Chemical Society |
| Year of publication | 2015 |
| Journal volume | 137 |
| Journal issue | 48 |
| Pages of publication | 15287 - 15298 |
| a | 10.8153 ± 0.0002 Å |
| b | 15.1273 ± 0.0003 Å |
| c | 16.7307 ± 0.0003 Å |
| α | 85.503 ± 0.001° |
| β | 89.664 ± 0.001° |
| γ | 74.894 ± 0.001° |
| Cell volume | 2634.23 ± 0.09 Å3 |
| Cell temperature | 100 ± 2 K |
| Ambient diffraction temperature | 100 ± 2 K |
| Number of distinct elements | 6 |
| Space group number | 2 |
| Hermann-Mauguin space group symbol | P -1 |
| Hall space group symbol | -P 1 |
| Residual factor for all reflections | 0.0273 |
| Residual factor for significantly intense reflections | 0.0267 |
| Weighted residual factors for significantly intense reflections | 0.0748 |
| Weighted residual factors for all reflections included in the refinement | 0.0754 |
| Goodness-of-fit parameter for all reflections included in the refinement | 0.997 |
| Diffraction radiation wavelength | 1.54178 Å |
| Diffraction radiation type | CuKα |
| Has coordinates | Yes |
| Has disorder | No |
| Has Fobs | No |
| Revision | Date | Message | Files |
|---|---|---|---|
| 240403 (current) | 2019-11-25 | cif/ Adding structures of 4129735, 4129736, 4129737 via cif-deposit CGI script. |
4129735.cif |
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Users of the data should acknowledge the original authors of the
structural data.