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Information card for entry 4129736
Preview
| Coordinates | 4129736.cif | 
|---|---|
| Original paper (by DOI) | HTML | 
| Formula | C30 H42 Ni O2 P2 Si | 
|---|---|
| Calculated formula | C30 H42 Ni O2 P2 Si | 
| SMILES | c12c3cccc1O[P](C(C)C)(C(C)C)[Ni]2([P](C(C)C)(C(C)C)O3)[SiH](c1ccccc1)c1ccccc1 | 
| Title of publication | Reactions of Phenylhydrosilanes with Pincer-Nickel Complexes: Evidence for New Si-O and Si-C Bond Formation Pathways. | 
| Authors of publication | Hao, Jingjun; Vabre, Boris; Zargarian, Davit | 
| Journal of publication | Journal of the American Chemical Society | 
| Year of publication | 2015 | 
| Journal volume | 137 | 
| Journal issue | 48 | 
| Pages of publication | 15287 - 15298 | 
| a | 11.832 ± 0.0001 Å | 
| b | 20.1684 ± 0.0002 Å | 
| c | 25.0196 ± 0.0003 Å | 
| α | 90° | 
| β | 90° | 
| γ | 90° | 
| Cell volume | 5970.49 ± 0.11 Å3 | 
| Cell temperature | 100 ± 2 K | 
| Ambient diffraction temperature | 100 ± 2 K | 
| Number of distinct elements | 6 | 
| Space group number | 61 | 
| Hermann-Mauguin space group symbol | P b c a | 
| Hall space group symbol | -P 2ac 2ab | 
| Residual factor for all reflections | 0.0305 | 
| Residual factor for significantly intense reflections | 0.0279 | 
| Weighted residual factors for significantly intense reflections | 0.0768 | 
| Weighted residual factors for all reflections included in the refinement | 0.079 | 
| Goodness-of-fit parameter for all reflections included in the refinement | 1.016 | 
| Diffraction radiation wavelength | 1.54178 Å | 
| Diffraction radiation type | CuKα | 
| Has coordinates | Yes | 
| Has disorder | No | 
| Has Fobs | No | 
| Revision | Date | Message | Files | 
|---|---|---|---|
| 240403 (current) | 2019-11-25 | cif/ Adding structures of 4129735, 4129736, 4129737 via cif-deposit CGI script.  | 
	4129736.cif | 
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          Users of the data should acknowledge the original authors of the
          structural data.